Study of dual radio frequency capacitively coupled plasma: an analytical treatment matched to an experiment. (22nd January 2018)

• Record Type: Journal Article
• Authors: Saikia, P; Bhuyan, H; Escalona, M; Favre, M; Wyndham, E; Maze, J; Schulze, J
• Is Part Of: Plasma sources science & technology. Volume 27:Number 1(2018:Feb.)
• Publication Date: 2018-01-22
• Subjects: capacitively coupled rf plasma -- dual frequency -- sheath potential -- plasma parameters -- DC self-bias; Plasma (Ionized gases) -- Periodicals; 530.44
• DOI: 10.1088/1361-6595/aaa565
• Languages: English
• ISSNs: 0963-0252

Abstract

Abstract: The behavior of a dual frequency capacitively coupled plasma (2f CCP) driven by 2.26 and 13.56 MHz radio frequency (rf) source is investigated using an approach that integrates a theoretical model and experimental data. The basis of the theoretical analysis is a time dependent dual frequency analytical sheath model that casts the relation between the instantaneous sheath potential and plasma parameters. The parameters used in the model are obtained by operating the 2f CCP experiment (2.26 MHz + 13.56 MHz) in argon at a working pressure of 50 mTorr. Experimentally measured plasma parameters such as the electron density, electron temperature, as well as the rf current density ratios are the inputs of the theoretical model. Subsequently, a convenient analytical solution for the output sheath potential and sheath thickness was derived. A comparison of the present numerical results is done with the results obtained in another 2f CCP experiment conducted by Semmler et al (2007 Plasma Sources Sci. Technol. 16 839). A good quantitative correspondence is obtained. The numerical solution shows the variation of sheath potential with the low and high frequency (HF) rf powers. In the low pressure plasma, the sheath potential is a qualitative measure of DC self-bias which in turn determines the ion energy. Thus, using this analytical model, the measured values of the DC self-bias as a function of low and HF rf powers are explained in detail.