High Performance Graphene–Oxide–Metal Diode through Bias‐Induced Barrier Height Modulation. (21st July 2016)

• Record Type: Journal Article
• Authors: Urcuyo, Roberto; Duong, Dinh Loc; Jeong, Hye Yun; Burghard, Marko; Kern, Klaus
• Is Part Of: Advanced Electronic Materials. Volume 2:Number 9(2016)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2016-07-21
• Subjects: graphene -- metal–insulator–metal diodes -- work function modulation; Materials -- Electric properties -- Periodicals; Materials science -- Periodicals; Magnetic materials -- Periodicals; Electronic apparatus and appliances -- Periodicals; 537
• DOI: 10.1002/aelm.201600223
• Languages: English
• ISSNs: 2199-160X

Abstract

Abstract : Graphene–oxide–metal diodes are presented whose performance is preserved even for thin oxide layers, as required for high frequency applications. The diodes, which rely upon bias‐induced modulation of graphene's work function, thus overcome a major, longstanding issue of metal–insulator–metal diodes.