Solution‐Processed Alkaline Lithium Oxide Dielectrics for Applications in n‐ and p‐Type Thin‐Film Transistors. (13th July 2016)

• Record Type: Journal Article
• Authors: Liu, Ao; Liu, Guoxia; Zhu, Chundan; Zhu, Huihui; Fortunato, Elvira; Martins, Rodrigo; Shan, Fukai
• Is Part Of: Advanced Electronic Materials. Volume 2:Number 9(2016)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2016-07-13
• Subjects: high‐k dielectrics -- low operation voltage -- low‐temperature solution processing -- p‐type cupric oxides -- thin‐film transistors; Materials -- Electric properties -- Periodicals; Materials science -- Periodicals; Magnetic materials -- Periodicals; Electronic apparatus and appliances -- Periodicals; 537
• DOI: 10.1002/aelm.201600140
• Languages: English
• ISSNs: 2199-160X

Abstract

Abstract : High‐ k alkaline lithium oxide (LiO x ) thin films are fabricated by spin‐coating method. The LiO x thin films are annealed at different temperatures and characterized by various techniques. An optimized LiO x dielectric is achieved at an annealing temperature of 300 °C and exhibits wide bandgap of ≈5.5 eV, smooth surface, relatively permittivity of ≈6.7, and low leakage current density. The as‐fabricated LiO x thin films are integrated, as gate dielectrics, in both n‐channel indium oxide (In2 O3 ) and p‐channel cupric oxide (CuO) transistors. The optimized In2 O3 /LiO x thin‐film transistor (TFT) exhibits high performance and high stability, such as I on / I off of 10 7, electron mobility of 5.69 cm 2 V −1 s −1, subthreshold swing of 70 mV dec −1, negligible hysteresis, and threshold voltage shift of 0.1 V under bias stress for 1.5 h. Meanwhile, the p‐channel CuO TFT based on LiO x dielectric shows high I on / I off of 10 5 and hole mobility of 1.72 cm 2 V −1 s −1 . All the electrical performances are achieved at an ultra‐low operating voltage of 2 V. Considering the simple procedure, the moderate annealing temperature, and the low power consumption merits, these outstanding characteristics represent a significant advance toward the development of battery compatible and portable electronics. Abstract : A facile solution route is used to fabricate low‐voltage n‐type and p‐type oxide thin‐film transistors (TFTs). The high‐ k LiO x is proven to be an attractive channel–insulator interface constituent and exhibits excellent electrical properties. The solution‐processed p‐type CuO/LiO x TFT exhibits superior hole transport characteristics with a field‐effect mobility of 1.72 cm 2 V −1 s −1 at low operating voltage of 1.5 V.