Developments of SiC DioMOS (Diode Integrated SiC MOSFET). Issue 1693 (3rd June 2014)

• Record Type: Journal Article
• Authors: Kitabatake, Makoto
• Is Part Of: MRS proceedings. Issue 1693:(2014)
• Publication Date: 2014-06-03
• Subjects: devices, -- epitaxy, -- thin film; Electrical engineering -- Congresses; Physics -- Congresses; Materials -- Research -- Congresses; Materials science -- Congresses; 620.11
• DOI: 10.1557/opl.2014.522
• Languages: English
• ISSNs: 0272-9172

Abstract

ABSTRACT: SiC power devices can handle large power and high frequency switching beyond the Si power devices. Typical full-SiC power modules are composed of both SiC-MOSFETs and SiC-SBDs to suppress the degradation of Ron of SiC-MOSFET during the bipolar reverse-current flow while there will be unfavorable consequences such as increased material cost, larger area, and larger wiring inductances. Panasonic has proposed the SiC-DioMOS which successfully integrates the unipolar reverse diode without any increase of chip size from the original DIMOS transistor. The SiC-DioMOS utilizes the highly-doped n-type epitaxial channel under the MOS gate for the FET channel and also for the reverse conduction path of the diode. Thickness and concentration of the highly-doped n-typed channel are carefully designed to achieve reasonable Vth of the MOSFET and Vf0 barrier constituting the diode current. The MOSFET and also the MOS-channel diode completely operate under unipolar mode. The SiC-DioMOS with BVds =1700V, Ron=20mΩ、Vth =4.5V, Vf0 =0.8V is successively fabricated using the state-of-the-art epitaxial-growth technique. Fast switching of tr =58ns and tf =13ns is confirmed. The SiC-DioMOS meets practical standards for safety operation of high-power fast switching without SiC-SBD.