Raman Spectroscopy in Group IV Nanowires and Nanowire Axial Heterostructures. Issue 1659 (13th February 2014)

• Record Type: Journal Article
• Authors: Anaya, J.; Torres, A.; Jiménez, J.; Rodríguez, A.; Rodríguez, T.; Ballesteros, C.
• Is Part Of: MRS proceedings. Issue 1659:(2014)
• Publication Date: 2014-02-13
• Subjects: nanostructure, -- Raman spectroscopy, -- transmission electron microscopy (TEM); Electrical engineering -- Congresses; Physics -- Congresses; Materials -- Research -- Congresses; Materials science -- Congresses; 620.11
• DOI: 10.1557/opl.2014.197
• Languages: English
• ISSNs: 0272-9172

Abstract

ABSTRACT: The control of the SiGe NW composition is fundamental for the fabrication of high quality heterostructures. Raman spectroscopy has been used to analyse the composition of SiGe alloys. We present a study of the Raman spectrum of SiGe nanowires and SiGe/Si heterostructures. The inhomogeneity of the Ge composition deduced from the Raman spectrum is explained by the existence of a Ge-rich outer shell and by the interaction of the NW with the electromagnetic field associated with the laser beam.