Precise growth of Al2O3/SnO2/CNTs composites by a two-step atomic layer deposition and their application as an improved anode for lithium ion batteries. (1st October 2019)

• Record Type: Journal Article
• Authors: Zhu, Shengyun; Liu, Junqing; Sun, Jiaming
• Is Part Of: Electrochimica acta. Volume 319(2019)
• Page Start: 490
• Page End: 498
• Publication Date: 2019-10-01
• Subjects: Ultrathin SnO2 -- Al2O3 coating -- Atomic layer deposition -- Cycling stability -- Lithium ion battery; Electrochemistry -- Periodicals; Electrochemistry, Industrial -- Periodicals; 541.37
• DOI: 10.1016/j.electacta.2019.07.027
• Languages: English
• ISSNs: 0013-4686

Abstract

Abstract: SnO2 is considered as a high capacity anode material for lithium ion batteries. However, the poor cycling stability has seriously hindered its practical applications. In this work, we designed and prepared Al2 O3 /SnO2 /CNTs composites by uniformly and conformally depositing SnO2 and Al2 O3 on carbon nanotubes (CNTs) via a simple two-step atomic layer deposition (ALD) process. The thicknesses of SnO2 and Al2 O3 were precisely controlled by tuning the number of ALD-cycle to optimize the cycling performance of Al2 O3 /SnO2 /CNTs electrodes. The ultrathin SnO2 layer with a thickness of approximate 2.8 nm on CNTs exhibits a high capacity and an enhanced cycling stability due to the buffering effect of CNTs and limited SnO2 crystallization after the first step deposition. On this basis, Al2 O3 /SnO2 /CNTs electrodes exhibit a significantly improved cycling stability, rate capability and Coulombic efficiency due to surface stability and the structural integrity brought by Al2 O3 passivation after the second step deposition. Especially, 10-Al2 O3 /SnO2 /CNTs electrode deliveries a discharge capacity of 581.6 mAh g −1 at a current density of 100 mA g −1 and capacity retention is 90.85% against 2nd cycle after 200 charge-discharge cycles. We believe that this work provides an effective way for the design of high performance anode materials in advanced batteries.