Quantum transport localization through graphene. (9th December 2016)

• Record Type: Journal Article
• Authors: Srivastava, Saurabh; Kino, Hiori; Nakaharai, Shu; Verveniotis, Elisseos; Okawa, Yuji; Ogawa, Shinichi; Joachim, Christian; Aono, Masakazu
• Is Part Of: Nanotechnology. Volume 28:Number 3(2017)
• Publication Date: 2016-12-09
• Subjects: graphene -- localization -- defect density -- quantum transport; Nanotechnology -- Periodicals; Nanotechnology -- Periodicals; Nanotechnology; Publications périodiques; Nanotechnologies; Periodicals; 620.5
• DOI: 10.1088/1361-6528/28/3/035703
• Languages: English
• ISSNs: 0957-4484

Abstract

Abstract: Localization of atomic defect-induced electronic transport through a single graphene layer is calculated using a full-valence electronic structure description as a function of the defect density and taking into account the atomic-scale deformations of the layer. The elementary electronic destructive interferences leading to Anderson localization are analyzed. The low-voltage current intensity decreases with increasing length and defect density, with a calculated localization length ζ = 3.5 nm for a defect density of 5%. The difference from the experimental defect density of 0.5% required for an oxide surface-supported graphene to obtain the same ζ is discussed, pointing out how interactions of the graphene supporting surface and surface chemical modifications also control electronic transport localization.