Crystal growth and transport properties of Weyl semimetal TaAs. (30th November 2017)

• Record Type: Journal Article
• Authors: Sankar, Raman; Peramaiyan, G; Muthuselvam, I Panneer; Xu, Suyang; Hasan, M Zahid; Chou, F C
• Is Part Of: Journal of physics. Volume 30:Number 1(2018)
• Publication Date: 2017-11-30
• Subjects: Weyl semimetal -- field induced semiconducting behavior -- quantum oscillation; Condensed matter -- Periodicals; Matière condensée -- Périodiques; Vaste stoffen; Vloeistoffen; Natuurkunde; Electronic journals; Computer network resources; 530.4105
• DOI: 10.1088/1361-648X/aa9a75
• Languages: English
• ISSNs: 0953-8984

Abstract

Abstract: We report the single crystal growth and transport properties of a Weyl semimetal TaAs. Unsaturated large magnetoresistance of about 22 100% at 2 K and 9 T is observed. From the Hall measurement, carrier concentrations n = 4.608 × 10 24 m −3 and p = 3.099 × 10 24 m −3, and mobilities µ p = 2.502 m 2 V −1 s −1 and µ n = 16.785 m 2 V −1 s −1 at 2 K are extracted. The de Haas–van Alphen oscillations at 2 K and 9 T suggest the presence of a Fermi surface, and the quantum electronic parameters such as effective cyclotron mass and Dingle temperature were obtained using Lifshitz–Kosevich fitting. Temperature dependent resistivity measurements at different static magnetic fields suggest the formation of an insulating gap in the Weyl semimetal TaAs. An angle-resolved photoemission spectroscopy study reveals Fermi arc surface states with different shaped features such as a long elliptical contour around each Y ̄ point, a bowtie-shaped contour around each X ̄ point, and a crescent-shaped feature near the midpoint of each Γ ̄ – X ̄ ( Y ̄ ) line.