Passive Q-switching of an Yb:GdCa4O(BO3)3 laser induced by a few-layer Bi2Te3 topological insulator saturable absorber. (23rd October 2018)

• Record Type: Journal Article
• Authors: Yang, Jingnan; Li, Yuhang; Tian, Kan; Liu, Fenfen; Dou, Xiaodan; Ma, Yanjun; Han, Wenjuan; Xu, Honghao; Liu, Junhai
• Is Part Of: Laser physics letters. Volume 15:Number 12(2018:Dec.)
• Publication Date: 2018-10-23
• Subjects: Yb lasers -- passive Q-switching -- Bi2Te3 topological insulator saturable absorber; Lasers -- Periodicals; Physics -- Periodicals; 621.366
• DOI: 10.1088/1612-202X/aae5b0
• Languages: English
• ISSNs: 1612-2011

Abstract

Abstract: We report on efficient passively Q-switched operation of an Yb:GdCa4 O(BO3 )3 laser induced by a few-layer Bi2 Te3 topological insulator saturable absorber. A maximum average output power of 2.38 W is produced at a repetition rate of 325 kHz with a slope efficiency of 36%; the resulting pulse energy, duration, and peak power are respectively 7.32 µ J, 104 ns, and 70.4 W. The results obtained in our work demonstrate the potential of Yb:GdCa4 O(BO3 )3 crystal in the development of passively Q-switched solid-state lasers using 2D topological insulator saturable absorbers.