Structure and photoelectrochemistry of silver-copper-indium-diselenide ((AgCu)InSe2) thin film. (February 2018) - Zhang, Lin Rui
Abstract: In this work, silver (Ag) precursors with different thicknesses were sputtered on the surfaces of CuIn alloys, and (AgCu)InSe2 (ACIS) films were formed after selenization at 550 °C under nitrogen condition using a rapid thermal process furnace. The structure and electrical properties of the ACIS films were investigated. The result showed that the distribution of Ag + ion was more uniform with increasing the thickness of Ag precursor, and the surface of the thin-film became more homogeneous and denser. When Ag/Cu ratio ≥0.249, the small grain particles disappeared. The band gap can be rationally controlled by adjusting Ag content. When (Ag + Cu)/In ratio ≥ 1.15, the surface of the ACIS thin-film mainly exhibited n-type semiconductor. Through the photoelectrochemistry measurement, it was observed that the incorporation of Ag + ions could improve photocurrent by adjusting the band gap. With the Ag precursor thickness increased, the dark current decreased at the more negative potential. Highlights: Ag incorporation improves the CuInSe2 crystal quality and the film structure. The Ag + distribution affects the electrical and optical properties of the (AgCu)InSe2. The incorporation of Ag could decrease the dark current of CuInSe2.