Cite
HARVARD Citation
Fu, C. et al. (2018). A new method to determine the 2DEG density distribution for passivated AlGaN/AlN/GaN heterostructure field-effect transistors. Superlattices and microstructures. pp. 160-168. [Online].
This is an interim version of our Electronic Legal Deposit Catalogue-eJournals and eBooks while we continue to recover from a cyber-attack.
Fu, C. et al. (2018). A new method to determine the 2DEG density distribution for passivated AlGaN/AlN/GaN heterostructure field-effect transistors. Superlattices and microstructures. pp. 160-168. [Online].