Growth behavior and thermally stable electrical properties of TiNbO5 nanosheet thin films grown using the electrophoretic method. Issue 4 (April 2019)

• Record Type: Journal Article
• Authors: Im, Mir; Lee, Woong-Hee; Kweon, Sang-Hyo; Kang, Chong-Yun; Nahm, Sahn
• Is Part Of: Journal of the European Ceramic Society. Volume 39:Issue 4(2019)
• Page Start: 1149
• Page End: 1155
• Publication Date: 2019-04
• Subjects: Inorganic nanosheets -- TiNbO5 film -- Electrophoresis -- Robust dielectric -- High temperature capacitor; Ceramic materials -- Periodicals; Composite materials -- Periodicals; Matériaux céramiques -- Périodiques; Composites -- Périodiques; Ceramic materials; Composite materials; Periodicals; Electronic journals; 666.05
• DOI: 10.1016/j.jeurceramsoc.2018.12.057
• Languages: English
• ISSNs: 0955-2219

Abstract

Abstract: TiNbO5 (TNO) thin films were deposited by electrophoresis at room temperature by using TNO − nanosheets. These TNO films exhibited a large (001) interplanar distance (1.18 nm) owing to the presence of TBA + between the TNO layers. The TBA +, which were used to synthesize the TNO − nanosheets, were removed from the TNO film after annealing at 600 °C. Two types of structures were developed in the film annealed at 600 °C: type-1 and type-2, which revealed (001) interplanar distances of 0.52 and 0.71 nm, respectively. The TNO film annealed at 600 °C showed a dielectric constant of 48.5, low dielectric loss (0.02), and small leakage current density of 4.16 × 10 −7 A/cm 2 at 0.6 MV/cm. The dielectric properties were stable with respect to the film thickness and the applied electric field; the dielectric and insulation properties were maintained up to 300 °C. Therefore, TNO films are good candidates for high-temperature capacitors.