Optical Characterization of Si Nanowires: Dependence with Substrate Orientation and Light Polarization. Issue 1666 (21st July 2014)

• Record Type: Journal Article
• Authors: Badán, Juan A.; Marotti, Ricardo E.; Dalchiele, Enrique A.; Ariosa, Daniel; Martín, Francisco; Leinen, Dietmar; Ramos-Barrado, José R.
• Is Part Of: MRS proceedings. Issue 1666:(2014)
• Publication Date: 2014-07-21
• Subjects: Si, -- optical, -- nanostructure; Electrical engineering -- Congresses; Physics -- Congresses; Materials -- Research -- Congresses; Materials science -- Congresses; 620.11
• DOI: 10.1557/opl.2014.720
• Languages: English
• ISSNs: 0272-9172

Abstract

ABSTRACT: Optical properties of Si nanowire arrays (SiNWs) prepared on p-doped Si(111) and Si(100) substrates are studied. The SiNWs were synthesized by self-assembly electroless metal deposition nanoelectrochemistry in an ionic silver HF solution through selective etching. Total reflectance ( R t ) and total diffuse reflectance ( R dt ) of SiNWs change drastically in comparison to polished Si. To understand these changes diffuse reflectance ( R d ) with polarized incident light was studied. For samples prepared on Si(111), the wavelength integrated R d (wIRd) shows maxima at certain angle of incidence θ and it does not depend on light polarization. Moreover, R dt of SiNWs prepared on Si(111) can be modeled as an ensemble of diffuse reflectors. For samples prepared on Si(100) wIRd increases with θ, being greater when the light electric field is parallel to the plane of incidence. Also, R d spectra show structures due to interference effects. For these reasons SiNWs prepared on Si(100) can be considered as a thin film whose refractive index depends on light polarization.