Cite
HARVARD Citation
Morgan, K. et al. (2014). Effect of Stoichiometry of TiN Electrode on the Switching Behavior of TiN/HfOx/TiN Structures for Resistive RAM. MRS proceedings. p. . [Online].
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Morgan, K. et al. (2014). Effect of Stoichiometry of TiN Electrode on the Switching Behavior of TiN/HfOx/TiN Structures for Resistive RAM. MRS proceedings. p. . [Online].