Cite
HARVARD Citation
Margetis, J. et al. (n.d.). Strain engineering in epitaxial Ge1−xSnx: a path towards low-defect and high Sn-content layers. Semiconductor science and technology. p. . [Online].
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Margetis, J. et al. (n.d.). Strain engineering in epitaxial Ge1−xSnx: a path towards low-defect and high Sn-content layers. Semiconductor science and technology. p. . [Online].