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HARVARD Citation
Mandal, S. et al. (n.d.). Observation and discussion of avalanche electroluminescence in GaN p-n diodes offering a breakdown electric field of 3 MV cm−1. Semiconductor science and technology. p. . [Online].
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Mandal, S. et al. (n.d.). Observation and discussion of avalanche electroluminescence in GaN p-n diodes offering a breakdown electric field of 3 MV cm−1. Semiconductor science and technology. p. . [Online].