Cite
HARVARD Citation
Lin, C. et al. (2019). A Triode Device with a Gate Controllable Schottky Barrier: Germanium Nanowire Transistors and Their Applications. Small. 15 (33), p. n/a. [Online].
This is an interim version of our Electronic Legal Deposit Catalogue-eJournals and eBooks while we continue to recover from a cyber-attack.
Lin, C. et al. (2019). A Triode Device with a Gate Controllable Schottky Barrier: Germanium Nanowire Transistors and Their Applications. Small. 15 (33), p. n/a. [Online].