Cite
HARVARD Citation
He, Y. et al. (2019). Temperature‐Dependent Characteristics of AlGaN/GaN Nanowire Channel High Electron Mobility Transistors. Physica status solidi. 216 (16), p. n/a. [Online].
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He, Y. et al. (2019). Temperature‐Dependent Characteristics of AlGaN/GaN Nanowire Channel High Electron Mobility Transistors. Physica status solidi. 216 (16), p. n/a. [Online].