Fabrication of Si tunnel diodes for c-Si based tandem solar cells using proximity rapid thermal diffusion. (September 2017)

• Record Type: Journal Article
• Authors: Fave, Alain; Lelièvre, Jean-François; Gallet, Thibaut; Su, Qiaoyu; Lemiti, Mustapha
• Is Part Of: Energy procedia. Volume 124(2017)
• Page Start: 577
• Page End: 583
• Publication Date: 2017-09
• Subjects: tandem solar cell -- silicon tunnel junction -- proximity rapid thermal diffusion; Power resources -- Congresses; Power resources -- Periodicals; Power resources; Conference proceedings; Periodicals; 333.7905
• DOI: 10.1016/j.egypro.2017.09.281
• Languages: English
• ISSNs: 1876-6102

Abstract

Abstract: Increasing competitiveness of photovoltaic (PV) devices is currently an important objective in technological research, especially with the development of tandem solar cells based on c-Si as the bottom cell. For a monolithical structure, a tunnel diode in between the top and bottom cells is necessary. In this work we report on the development of the fabrication of Si tunnel junction using a combination of spin-on doping and proximity rapid thermal diffusion. A desirable attribute of this process is simplicity. Two different structures p ++ /n ++ or n ++ /p ++ were fabricated on (100) Si substrates. Carrier density profiles were measured by ECV to characterize the shallow doping profiles. Vertical tunnel diodes were fabricated and I(V) characteristics are presented. It is shown that device peak current densities up to 270 A/cm² are achieved using this technique, which is the best value reported with such simple technique.