Grain boundaries and dislocations in Si-bricks: inline characterization on as-cut wafers. (September 2017)
- Record Type:
- Journal Article
- Title:
- Grain boundaries and dislocations in Si-bricks: inline characterization on as-cut wafers. (September 2017)
- Main Title:
- Grain boundaries and dislocations in Si-bricks: inline characterization on as-cut wafers
- Authors:
- Strauch, Theresa
Demant, Matthias
Krenckel, Patricia
Riepe, Stephan
Rein, Stefan - Abstract:
- Abstract: In High-Performance mc-Si [1] random grain boundaries, although being recombination active, often enhance material quality by reducing dislocations. With this work, we take a step towards statistical large-scale investigations of crystal defects via a combined analysis of different inline-measurements on as-cut wafers: photoluminescence images for the extraction of recombination-active structures and reflection and infrared transmission images for the extraction of the grain structure. The combined extraction of recombination-active structures and grain structures allows isolating dislocations from grain boundaries for all material types. To discern dislocations from other recombination-active defect structures, an image-processing-based analysis technique has been developed. By applying this separation on wafers from various bricks of our material set, typical developments of grain structure and dislocations can be identified. As a particular application, we investigate the correlation between the development of dislocations in higher parts of the brick and grain size in the lower parts. The results support theory quantitatively: Dislocation ratio in the upper brick part shows a correlation with the square root of the weighted median of the grain size in the lower brick part (R≈0.85). However, the results also show that grain size distribution, in particular grain size homogeneity, has to be considered to account for a stronger distinction between materials.
- Is Part Of:
- Energy procedia. Volume 124(2017)
- Journal:
- Energy procedia
- Issue:
- Volume 124(2017)
- Issue Display:
- Volume 124, Issue 2017 (2017)
- Year:
- 2017
- Volume:
- 124
- Issue:
- 2017
- Issue Sort Value:
- 2017-0124-2017-0000
- Page Start:
- 806
- Page End:
- 813
- Publication Date:
- 2017-09
- Subjects:
- Dislocations -- Grain Boundaries -- Material Quality -- High-Performance mc-Si -- Image Processing
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333.7905 - Journal URLs:
- http://www.sciencedirect.com/science/journal/18766102 ↗
http://www.elsevier.com/journals ↗ - DOI:
- 10.1016/j.egypro.2017.09.351 ↗
- Languages:
- English
- ISSNs:
- 1876-6102
- Deposit Type:
- Legaldeposit
- View Content:
- Available online (eLD content is only available in our Reading Rooms) ↗
- Physical Locations:
- British Library DSC - 3747.729700
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