Electrically-controlled nonlinear switching and multi-level storage characteristics in WOx film-based memory cells. (May 2018)

• Record Type: Journal Article
• Authors: Duan, W.J.; Wang, J.B.; Zhong, X.L.
• Is Part Of: Journal of physics and chemistry of solids. Volume 116(2018)
• Page Start: 148
• Page End: 152
• Publication Date: 2018-05
• Subjects: A. WOx film -- C. Non-stoichiometric -- D. Nonlinear switching -- D. Multi-level storage; Solids -- Periodicals; Solides -- Périodiques; Solids; Periodicals; 530.41
• DOI: 10.1016/j.jpcs.2018.01.019
• Languages: English
• ISSNs: 0022-3697

Abstract

Abstract: Resistive switching random access memory (RRAM) is considered as a promising candidate for the next generation memory due to its scalability, high integration density and non-volatile storage characteristics. Here, the multiple electrical characteristics in Pt/WO x /Pt cells are investigated. Both of the nonlinear switching and multi-level storage can be achieved by setting different compliance current in the same cell. The correlations among the current, time and temperature are analyzed by using contours and 3D surfaces. The switching mechanism is explained in terms of the formation and rupture of conductive filament which is related to oxygen vacancies. The experimental results show that the non-stoichiometric WO x film-based device offers a feasible way for the applications of oxide-based RRAMs. Highlights: Coexistence of nonlinear switching and multi-level characteristics in Pt/WO x /Pt cell is found. The nonlinear switching and multi-level characteristics can be realized by current control. The relationships among the current, time and temperature are investigated.