Demonstrating the high Voc potential of PEDOT:PSS/c-Si heterojunctions on solar cells. (September 2017)

• Record Type: Journal Article
• Authors: Gogolin, Ralf; Zielke, Dimitri; Descoeudres, Antoine; Despeisse, Matthieu; Ballif, Christophe; Schmidt, Jan
• Is Part Of: Energy procedia. Volume 124(2017)
• Page Start: 593
• Page End: 597
• Publication Date: 2017-09
• Subjects: PEDOT:PSS -- heterojunctions -- solar cells -- Voc potential; Power resources -- Congresses; Power resources -- Periodicals; Power resources; Conference proceedings; Periodicals; 333.7905
• DOI: 10.1016/j.egypro.2017.09.295
• Languages: English
• ISSNs: 1876-6102

Abstract

Abstract: In this study, we demonstrate the high surface passivation quality of PEDOT:PSS/c-Si junctions for the first time on solar cell level, reaching a record high Voc value of 688 mV after full-area metallization of the PEDOT:PSS. We achieve this by combining the PEDOT:PSS hole-selective layer at the rear of the crystalline silicon wafer with a well-passivating electron-selective a-Si:H(i/n) layer stack at the front. Our results clearly prove the excellent hole selectivity of PEDOT:PSS on crystalline silicon.