Research of carrier mobility in NPD through negative differential susceptance spectra. Issue 3 (12th December 2014)

• Record Type: Journal Article
• Authors: Xu, Hui; Tang, Chao; Zhai, Wen-Juan; Liu, Rui-Lan; Rong, Zhou; Fan, Qu-Li; Huang, Wei
• Is Part Of: European physical journal. Number 68:Issue 3(2014:Dec.)
• Publication Date: 2014-12-12
• Subjects: Physics -- Periodicals; Microscopy -- Periodicals; Microchemistry -- Periodicals; Microstructure -- Periodicals; 530
• DOI: 10.1051/epjap/2014140298
• Languages: English
• ISSNs: 1286-0042

Abstract

Abstract : In this paper, the hole carrier mobility of organic semiconductor N, N′-diphenyl-N, N′bis(1, 1′-biphenyl)-4, 4′-diamine (NPD) was researched by negative differential susceptance spectra (− ΔB = − w ( C − C geo ) ~ f ). Under the condition of space charge limited current (SCLC), through solving the drift current equation and Poisson equation and simulating the spectra − ΔB = − w ( C − C geo ) ~ f, the relationship between the peak of − ΔB = − w ( C − C geo ) ~ f spectra ( 1 /ƒp = τp ) and the transfer time of carrier ( τ dc ) could be achieved to be τ dc = k × τ p . So the hole-only device of ITO/NPD/Ag was fabricated to determine the capacitance spectra, and through which its − ΔB = − w ( C − C geo ) ~ f could be plotted. According to the relationship of τ dc = k × τ p, where k was determined to be 0.56, the transfer time and further the carrier mobility could be obtained. The carrier mobility depended on the electric field according to Poole-Frenkel model was further investigated in this report.