Characterization and optimization of ion implantation for high spatial resolution quantum well intermixing in GaAs/AlGaAs superlattices. Issue 1 (1st April 2014)

• Record Type: Journal Article
• Authors: Younis, Usman; Holmes, Barry M.; Hutchings, David C.
• Is Part Of: European physical journal. Number 66:Issue 1(2014:Apr.)
• Publication Date: 2014-04-01
• Subjects: Physics -- Periodicals; Microscopy -- Periodicals; Microchemistry -- Periodicals; Microstructure -- Periodicals; 530
• DOI: 10.1051/epjap/2014140020
• Languages: English
• ISSNs: 1286-0042

Abstract

Abstract : Processes to achieve high spatial resolution ion implantation induced quantum well intermixing in GaAs/AlGaAs superlattices have been developed. Ion implantation has been carried out using various doses of 4 MeV As 2+ ion beam, followed by rapid thermal annealing at various temperatures for 60 s. Low temperature photoluminescence measurements reveal a blue-shift up to 90 nm in the energy band-gap. Propagation losses have been characterized in the intermixed waveguides, and losses as low as 0.55 cm −1 have been observed for 0.5 × 10 13 cm −2 implantation dose which gives a blue-shift of 68 nm when annealed at 775 °C. The spatial resolution of ~1.2 μ m has been observed at the depth of 2 μ m inside the epitaxial structure.