Cite
HARVARD Citation
Jang, H. et al. (n.d.). Selective metallization of amorphous-indium–gallium–zinc-oxide thin-film transistor by using helium plasma treatment. Semiconductor science and technology. p. . [Online].
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Jang, H. et al. (n.d.). Selective metallization of amorphous-indium–gallium–zinc-oxide thin-film transistor by using helium plasma treatment. Semiconductor science and technology. p. . [Online].