A dopant-free polyelectrolyte hole-transport layer for high efficiency and stable planar perovskite solar cells. Issue 32 (23rd July 2019)

• Record Type: Journal Article
• Authors: Zhang, Wenxiao; Wan, Li; Li, Xiaodong; Wu, Yulei; Fu, Sheng; Fang, Junfeng
• Is Part Of: Journal of materials chemistry. Volume 7:Issue 32(2019)
• Page Start: 18898
• Page End: 18905
• Publication Date: 2019-07-23
• Subjects: Materials -- Research -- Periodicals; Chemistry, Analytic -- Periodicals; Environmental sciences -- Research -- Periodicals; 543.0284
• DOI: 10.1039/c9ta05048e
• Languages: English
• ISSNs: 2050-7488

Abstract

Abstract : High efficiency and stable planar perovskite solar cells based on a dopant-free polyelectrolyte P3CT-BN hole transport layer. Abstract : Spiro-OMeTAD is a commonly used hole transport material (HTM) in regular device structures. However, a complex and uncontrollable oxygen doping process is necessary. To avoid the drawbacks of dopants, a polyelectrolyte (P3CT-BN) is introduced as a dopant-free HTM. The CO group on P3CT-BN could interact with bare Pb at the perovskite surface, which facilitates hole transfer at the perovskite/HTL interface. The P3CT-BN layer could reduce interfacial recombination and exhibits outstanding film-forming properties. Thus the efficiency of the best device is improved from 18.26% to 19.05% when replacing Spiro-OMeTAD with P3CT-BN. Moreover, devices based on P3CT-BN exhibit outstanding stability, retaining 80% of their original performance after storage in the atmosphere (30–40% relative humidity) for 1800 h without encapsulation. These results indicate that P3CT-BN can be an effective HTM to realize high efficiency and stable PSCs.