All-polymer photodetectors with photomultiplication. Issue 31 (22nd July 2019)

• Record Type: Journal Article
• Authors: Yang, Kaixuan; Wang, Jian; Miao, Jianli; Zhang, Jian; Zhang, Fujun
• Is Part Of: Journal of materials chemistry. Volume 7:Issue 31(2019)
• Page Start: 9633
• Page End: 9640
• Publication Date: 2019-07-22
• Subjects: Materials -- Periodicals; Chemistry, Analytic -- Periodicals; Optical materials -- Research -- Periodicals; Electronics -- Materials -- Research -- Periodicals; 543.0284
• DOI: 10.1039/c9tc02751c
• Languages: English
• ISSNs: 2050-7526

Abstract

Abstract : Photomultiplication type all-polymer photodetectors were fabricated with P3HT : PZ1 (100 : 4, wt/wt) as active layers. The EQE values are 46 700% and 31 700% at 375 nm and 615 nm under a −20 V bias, respectively. Abstract : All-polymer photodetectors (all-PPDs) are successfully fabricated with two polymers P3HT and PZ1 as active layers. The weight ratio of P3HT to PZ1 and the self-assembly time of the active layers were step-by-step optimized to improve the performance of the all-PPDs. The photomultiplication (PM) phenomenon is achieved in the all-PPDs with an external quantum efficiency (EQE) over 100% in the whole response range. The EQE values of the optimized PM type all-PPDs can be greatly improved with a bias increase. The EQE values are increased to 46 700% at 375 nm and 31 700% at 615 nm under a −20 V bias. The working mechanism of the PM type all-PPDs is hole tunneling injection from an external circuit assisted by interfacial trapped photogenerated electrons in P3HT/PZ1/P3HT. The specific detectivity ( D* ) values are improved to 5.6 × 10 12 Jones at 375 nm and 6.1 × 10 12 Jones at 615 nm under a −20 V bias. The relatively large D* can be attributed to the enhanced hole tunneling injection under light illumination conditions and the relatively low dark current density.