Oxygen-deficient GdK2Nb5O15 ferroelectric epitaxial thin film. (6th February 2017)

• Record Type: Journal Article
• Authors: Allouche, B.; Gagou, Y.; Le Marrec, F.; Fremy, M.-A.; El Marssi, M.
• Is Part Of: Europhysics letters. Volume 116:Number 6(2016:Dec.)
• Publication Date: 2017-02-06
• Subjects: 77.55.Px -- 77.22.Ch -- 61.05.cp; Physics -- Periodicals; Electronic journals; 530.05
• DOI: 10.1209/0295-5075/116/67001
• Languages: English
• ISSNs: 0295-5075

Abstract

Abstract: The ferroelectric compound GdK2 Nb5 O15 (GKN) thin film with tetragonal-tungsten-bronze–type structure was grown by pulsed-laser deposition on (001)SrRuO3 /La0.5 Sr0.5 CoO3 /MgO substrate. Using X-ray diffraction analysis we demonstrate that the phase transition temperature in the GKN thin film was shifted to high temperatures due to substrate-induced stress. Impedance spectroscopy investigations show Maxwell-Wagner–type conduction at low frequencies, which leads to resistive switching. Oxygen vacancies and temperature effects were studied to highlight the stability of the resistive switching behavior in the GKN thin film.