Epitaxy of Si1−xCx via ultrahigh-vacuum chemical vapor deposition using Si2H6, Si3H8, or Si4H10 as Si precursors. (21st August 2017)

• Record Type: Journal Article
• Authors: Koo, Sangmo; Jang, Hyunchul; Ko, Dae-Hong
• Is Part Of: Japanese journal of applied physics. Volume 56:Number 9(2017)
• Publication Date: 2017-08-21
• Subjects: Physics -- Periodicals; 621.05
• DOI: 10.7567/JJAP.56.095502
• Languages: English
• ISSNs: 0021-4922

Abstract

Abstract: In this study, disilane (Si2 H6 ), trisilane (Si3 H8 ), and tetrasilane (Si4 H10 ) were used as Si precursors for the growth of Si1− x C x epilayers, and the growth properties of the layers were compared. The use of a higher-order silane significantly increased the growth rates of the Si1− x C x epilayers at a processing temperature of 650 °C. In addition, a higher growth rate realized by using a higher-order silane promoted an increase in the substitutional carbon concentration in the Si1− x C x epilayers owing to the additional injection of a C-source gas (SiH3 CH3 ) and the incorporation of C atoms into substitutional sites. The differences in growth properties between Si precursors were explained on the basis of reaction mechanisms.