Interface electronic structure at the topological insulator–ferrimagnetic insulator junction. (2nd December 2016)

• Record Type: Journal Article
• Authors: Kubota, Y; Murata, K; Miyawaki, J; Ozawa, K; Onbasli, M C; Shirasawa, T; Feng, B; Yamamoto, Sh; Liu, R-Y; Yamamoto, S; Mahatha, S K; Sheverdyaeva, P; Moras, P; Ross, C A; Suga, S; Harada, Y; Wang, K L; Matsuda, I
• Is Part Of: Journal of physics. Volume 29:Number 5(2017)
• Publication Date: 2016-12-02
• Subjects: topological insulator -- ferrimagnetic insulator -- heterojunction -- synchrotron radiation; Condensed matter -- Periodicals; Matière condensée -- Périodiques; Vaste stoffen; Vloeistoffen; Natuurkunde; Electronic journals; Computer network resources; 530.4105
• DOI: 10.1088/1361-648X/29/5/055002
• Languages: English
• ISSNs: 0953-8984

Abstract

Abstract: An interface electron state at the junction between a three-dimensional topological insulator film, Bi2 Se3, and a ferrimagnetic insulator film, Y3 Fe5 O12 (YIG), was investigated by measurements of angle-resolved photoelectron spectroscopy and x-ray absorption magnetic circular dichroism. The surface state of the Bi2 Se3 film was directly observed and localized 3 d spin states of the Fe 3+ in the YIG film were confirmed. The proximity effect is likely described in terms of the exchange interaction between the localized Fe 3 d electrons in the YIG film and delocalized electrons of the surface and bulk states in the Bi2 Se3 film.