Cite
HARVARD Citation
Caparroz, L. et al. (n.d.). Analysis of proton irradiated n- and p-type strained FinFETs at low temperatures down to 100 K. Semiconductor science and technology. p. . [Online].
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Caparroz, L. et al. (n.d.). Analysis of proton irradiated n- and p-type strained FinFETs at low temperatures down to 100 K. Semiconductor science and technology. p. . [Online].