The effect of SF6 addition in a Cl2/Ar inductively coupled plasma for deep titanium etching. (8th March 2018)

• Record Type: Journal Article
• Authors: Laudrel, E; Tillocher, T; Meric, Y; Lefaucheux, P; Boutaud, B; Dussart, R
• Is Part Of: Journal of micromechanics and microengineering. Volume 28:Number 5(2018:May)
• Publication Date: 2018-03-08
• Subjects: titanium deep etching -- nickel mask -- Cl2 -- SF6 -- ICP -- Ti:Ni selectivity -- Ti etch rate; Microelectromechanical systems -- Periodicals; Micromechanics -- Periodicals; 621.38105
• DOI: 10.1088/1361-6439/aaafe7
• Languages: English
• ISSNs: 0960-1317

Abstract

Abstract: Titanium is a material of interest for the biomedical field and more particularly for body implantable devices. Titanium deep etching by plasma was carried out in an inductively coupled plasma with a chlorine-based chemistry for the fabrication of titanium-based microdevices. Bulk titanium etch rate was first studied in Cl2 /Ar plasma mixture versus the source power and the self-bias voltage. The plasma was characterized by Langmuir probe and by optical emission spectroscopy. The addition of SF6 in the plasma mixture was investigated. Titanium etch rate was optimized and reached a value of 2.4 µ m · min −1 . The nickel hard mask selectivity was also enhanced. The etched titanium surface roughness was reduced significantly.