Locally hydrazine doped WSe2 p-n junction toward high-performance photodetectors. (29th November 2017)

• Record Type: Journal Article
• Authors: Sun, Mengxing; Xie, Dan; Sun, Yilin; Li, Weiwei; Ren, Tianling
• Is Part Of: Nanotechnology. Volume 29:Number 1(2018)
• Publication Date: 2017-11-29
• Subjects: photodetector -- 2D materials -- p-n junction -- chemical doping -- hydrazine; Nanotechnology -- Periodicals; Nanotechnology -- Periodicals; Nanotechnology; Publications périodiques; Nanotechnologies; Periodicals; 620.5
• DOI: 10.1088/1361-6528/aa96e9
• Languages: English
• ISSNs: 0957-4484

Abstract

Abstract: Two dimensional (2D) materials have shown great potential in the photodetection and other optoelectronic applications. Exploiting 2D materials to form p-n junctions enables effective generation and separation of carriers excited by light, thus creating high-performance optoelectronic devices. This paper demonstrates a lateral WSe2 p-n junction through a locally hydrazine doping method. Good current-rectifying characteristics, including a high rectification ratio of ∼10 3, have been observed; this indicates that a high-quality p-n junction has been formed by chemical doping. Under light illumination, the device shows improved photoresponse capabilities with a responsivity of 30 mA W −1, a detectivity of 6.18 × 10 8 Jones, photocurrent/dark current ratio of 10 3 and a response time of 2 ms. These results suggest an effective way to get a p-n junction and reveal the application potential of the device for next generation photodetectors.