A first-principles model of copper–boron interactions in Si: implications for the light-induced degradation of solar Si. (19th December 2016)
- Record Type:
- Journal Article
- Title:
- A first-principles model of copper–boron interactions in Si: implications for the light-induced degradation of solar Si. (19th December 2016)
- Main Title:
- A first-principles model of copper–boron interactions in Si: implications for the light-induced degradation of solar Si
- Authors:
- Wright, E
Coutinho, J
Öberg, S
Torres, V J B - Abstract:
- Abstract: The recent discovery that Cu contamination of Si combined with light exposure has a significant detrimental impact on carrier life-time has drawn much concern within the solar-Si community. The effect, known as the copper-related light-induced degradation (Cu-LID) of Si solar cells, has been connected to the release of Cu interstitials within the bulk (2016 Sol. Energy Mater. Sol. Cells 147 115–26). In this paper, we describe a comprehensive analysis of the formation/dissociation process of the CuB pair in Si by means of first-principles modelling, as well as the interaction of CuB defects with photo-excited minority carriers. We confirm that the long-range interaction between the C u i + cation and the B s − anion has a Coulomb-like behaviour, in line with the trapping-limited diffusivity of Cu observed by transient ion drift measurements. On the other hand, the short-range interaction between the d-electrons of Cu and the excess of negative charge on B s − produces a repulsive effect, thereby decreasing the binding energy of the pair when compared to the ideal point-charge Coulomb model. We also find that metastable CuB pairs produce acceptor states just below the conduction band minimum, which arise from the Cu level emptied by the B acceptor. Based on these results, we argue that photo-generated minority carriers trapped by the metastable pairs can switch off the Coulomb interaction that holds the pairs together, enhancing the release of Cu interstitials, andAbstract: The recent discovery that Cu contamination of Si combined with light exposure has a significant detrimental impact on carrier life-time has drawn much concern within the solar-Si community. The effect, known as the copper-related light-induced degradation (Cu-LID) of Si solar cells, has been connected to the release of Cu interstitials within the bulk (2016 Sol. Energy Mater. Sol. Cells 147 115–26). In this paper, we describe a comprehensive analysis of the formation/dissociation process of the CuB pair in Si by means of first-principles modelling, as well as the interaction of CuB defects with photo-excited minority carriers. We confirm that the long-range interaction between the C u i + cation and the B s − anion has a Coulomb-like behaviour, in line with the trapping-limited diffusivity of Cu observed by transient ion drift measurements. On the other hand, the short-range interaction between the d-electrons of Cu and the excess of negative charge on B s − produces a repulsive effect, thereby decreasing the binding energy of the pair when compared to the ideal point-charge Coulomb model. We also find that metastable CuB pairs produce acceptor states just below the conduction band minimum, which arise from the Cu level emptied by the B acceptor. Based on these results, we argue that photo-generated minority carriers trapped by the metastable pairs can switch off the Coulomb interaction that holds the pairs together, enhancing the release of Cu interstitials, and acting as a catalyst for Cu-LID. … (more)
- Is Part Of:
- Journal of physics. Volume 29:Number 6(2017)
- Journal:
- Journal of physics
- Issue:
- Volume 29:Number 6(2017)
- Issue Display:
- Volume 29, Issue 6 (2017)
- Year:
- 2017
- Volume:
- 29
- Issue:
- 6
- Issue Sort Value:
- 2017-0029-0006-0000
- Page Start:
- Page End:
- Publication Date:
- 2016-12-19
- Subjects:
- silicon -- light-induced degradation (LID) -- copper -- boron
Condensed matter -- Periodicals
Matière condensée -- Périodiques
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Natuurkunde
Electronic journals
Computer network resources
530.4105 - Journal URLs:
- http://www.iop.org/Journals/cm ↗
http://iopscience.iop.org/0953-8984/ ↗
http://ioppublishing.org/ ↗ - DOI:
- 10.1088/1361-648X/aa4d78 ↗
- Languages:
- English
- ISSNs:
- 0953-8984
- Deposit Type:
- Legaldeposit
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- Available online (eLD content is only available in our Reading Rooms) ↗
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- British Library DSC - BLDSS-3PM
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