Cite
HARVARD Citation
Park, J. et al. (2017). Improved uniformity in the switching characteristics of ZnO-based memristors using Ti sub-oxide layers. Journal of physics. p. . [Online].
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Park, J. et al. (2017). Improved uniformity in the switching characteristics of ZnO-based memristors using Ti sub-oxide layers. Journal of physics. p. . [Online].