Polymer‐Assisted Deposition of Al‐Doped HfO2 Thin Film with Excellent Dielectric Properties. Issue 14 (5th June 2019)

• Record Type: Journal Article
• Authors: Park, Gyeongbae; Yang, Heeseung; Lee, Ju Hyun; Lee, Gilwoon; Kwak, Junghyeok; Jeong, Unyong
• Is Part Of: Advanced materials interfaces. Volume 6:Issue 14(2019)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2019-06-05
• Subjects: Al doping -- HfO2 thin films -- high‐k dielectrics -- polymer‐assisted deposition -- solution process; Materials science -- Periodicals; 620.11
• DOI: 10.1002/admi.201900588
• Languages: English
• ISSNs: 2196-7350

Abstract

Abstract: Demands for high‐ k dielectric materials increase as transistors scale down. One of the promising high‐ k dielectric materials is HfO2 owing to its large band gap, high dielectric constant, and excellent physical/chemical stability. Although several cost‐effective solution‐based deposition methods have been developed, their dielectric performances are inferior to those obtained by vacuum processes (e.g., atomic layer deposition, sputtering). This study demonstrates a solution‐based polymer‐assisted deposition (PAD) of high‐ k Al‐doped HfO2 thin films exhibiting remarkable dielectric performances comparable to the conventional deposition methods. The PAD ensures the control of film thickness (≥3 nm) and the homogenous Al doping in the entire thin film. The key to the success is HCl‐mediated coordination of metal precursor and polymer. Thorough analysis on the structure and chemical composition of the dielectric layer is carried out. It is found that the phase transition from monoclinic phase to a mixture of tetragonal and amorphous phases results in excellent dielectric properties. The 7.8 nm thick thin film doped with 4.1 at% of Al exhibits a high dielectric constant of 30.2 with a high areal capacitance (674 nF cm −2 at 1.0 kHz), a low leakage current (3.3 × 10 −9 A cm −2 at 2.0 MV cm −1 ), and a high breakdown voltage (7.7 V). Abstract : High‐ k Al‐doped HfO2 dielectric thin films prepared by polymer‐assisted deposition are demonstrated. The Al‐doped HfO2 thin film has a dielectric constant of 30.2 with leakage current density of 3.3 × 10 −9 A cm −2 at 2.0 MV cm −1 that are comparable to the performance of the vacuum‐processed HfO2 thin films.