Layer-by-layer growth in solution deposition of monocrystalline lead sulfide thin films on GaAs(111). (3rd June 2019)

• Record Type: Journal Article
• Authors: Templeman, Tzvi; Perez, Maayan; Friedman, Ofir; Abutbul, Ran Eitan; Shandalov, Michael; Ezersky, Vladimir; Konovalov, Oleg; Golan, Yuval
• Is Part Of: Materials chemistry frontiers. Volume 3:Number 8(2019)
• Page Start: 1538
• Page End: 1544
• Publication Date: 2019-06-03
• Subjects: Materials science -- Periodicals; Chemistry -- Periodicals; 540
• DOI: 10.1039/c9qm00155g
• Languages: English
• ISSNs: 2052-1529

Abstract

Abstract : In situ synchrotron GIXD showed layer-by-layer growth in solution deposited monocrystalline thin films of lead sulfide on GaAs(111). Abstract : We report layer-by-layer growth of single crystal PbS films with unprecedented quality using chemical solution deposition, on par with much more sophisticated growth techniques. Ex situ transmission electron microscopy and in-house X-ray diffraction established the monocrystalline nature of the films and the atomically smooth film surface. High brilliance synchrotron X-rays were employed in grazing incidence geometry for in situ monitoring the formation of a gallium sulfide interfacial layer, and for establishing layer-by-layer growth of the subsequent PbS film. Our findings show that by maintaining a large reservoir of free sulfide ions, layer-by-layer growth is maintained by reducing the interfacial surface free energy.