Cite
HARVARD Citation
Jung, H. et al. (2018). Effects of Si/SiO2 interface stress on the performance of ultra-thin-body field effect transistors: a first-principles study. Nanotechnology. p. . [Online].
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Jung, H. et al. (2018). Effects of Si/SiO2 interface stress on the performance of ultra-thin-body field effect transistors: a first-principles study. Nanotechnology. p. . [Online].