High-performance electronic transport in the plane of 3D type-II Dirac semimetals. (4th September 2017)

• Record Type: Journal Article
• Authors: Ge, Yanfeng; Wan, Wenhui; Liu, Yong; Zhang, Ying
• Is Part Of: Journal of physics. Volume 29:Number 41(2017)
• Publication Date: 2017-09-04
• Subjects: type-II Dirac semimetals -- electron–phonon coupling -- electronic transport; Condensed matter -- Periodicals; Matière condensée -- Périodiques; Vaste stoffen; Vloeistoffen; Natuurkunde; Electronic journals; Computer network resources; 530.4105
• DOI: 10.1088/1361-648X/aa8162
• Languages: English
• ISSNs: 0953-8984

Abstract

Abstract: Recently, the type-II Dirac fermion, a new topological state, has been proposed in the Al3 V family. It breaks Lorentz symmetry and has unique physical properties. We use first-principles calculations to investigate electronic transport limited by phonon scattering. The electronic resistivity in the xy plane is estimated to be 24.1 μ Ω ⋅ cm for Al3 V and is much lower than that along the z direction. The heavy electronic effective mass along the z direction and the main electron–phonon coupling, originating from the phonon modes vibrating along the z direction, lead to anisotropic electronic transport, which is also found in other members of the Al3 V family.