Analysis of dynamic characteristics of SiC Schottky barrier diodes at high switching frequency based on junction capacitance. (21st February 2018)

• Record Type: Journal Article
• Authors: Maeda, Ryosuke; Okuda, Takafumi; Hikihara, Takashi
• Is Part Of: Japanese journal of applied physics. Volume 56:Number 4(2017)Supplement
• Publication Date: 2018-02-21
• Subjects: Physics -- Periodicals; 621.05
• DOI: 10.7567/JJAP.57.04FF01
• Languages: English
• ISSNs: 0021-4922

Abstract

Abstract: In this paper, we focus on relationships between dynamic characteristics and device structures of SiC Schottky barrier diodes (SBDs) to investigate their switching capabilities. A device model based on junction capacitance and thermionic emission theory is proposed. To measure the dynamic characteristics of SiC SBD, a high-frequency (10 MHz) and high-voltage (200 Vpp ) wave generator is fabricated. By comparing simulated results with experimental results, it is found that the proposed model can represent the dynamic characteristics at 10 MHz and 200 °C, and the simple device model based on junction capacitance and thermionic emission theory well describes the switching behaviors of SiC SBDs at full operational temperature. The proposed device model is beneficial for designing high-power converters, at both wide temperature and wide frequency ranges.