35.1: Blue‐Diode Laser Annealing of Amorphous Silicon Films for Low‐Cost, Large‐Scale Manufacturing of Advanced Displays. (28th November 2018)

• Record Type: Journal Article
• Authors: Park, Minok; Hong, Seungpyo; Jung, Y.H.; Lee, Suhui; Rho, Yoonsoo; Park, H. K.; Grigoropoulos, Costas P.; Jang, Jin
• Is Part Of: Digest of technical papers. Volume 49(2018)Supplement 1
• Page Start: 378
• Page End: 381
• Publication Date: 2018-11-28
• Subjects: Low Temperature Polycrystalline Silicon (LTPS) -- Blue diode laser -- Laser annealing -- Lateral grain growth; Information display systems -- Congresses; 621.3815422
• DOI: 10.1002/sdtp.12732
• Languages: English
• ISSNs: 0097-966X

Abstract

Abstract : Blue diode laser annealing (BLA) systems have been successfully developed for low‐temperature crystallization from amorphous silicon film on glass substrates. It is demonstrated that it can achieve high quality poly‐Si film with large grain sizes, as studied by optical microscopy, Raman spectroscopy and AFM measurements. The p‐channel poly‐Si TFT on glass using BLA exhibited the field‐effect mobility of 168.05 cm 2 /Vs and subthreshold swing of 220 mV/dec. BLA is scalable to large‐scale display manufacturing and significantly lowers the capital expense and operating cost, since diode lasers are highly reliable and rugged, remarkably efficient, and maintenance‐free, allowing 24/7 operations without the need of consumables. The BLA system consists of an array of high‐power blue diode lasers (λ ~ 450 nm) and beam‐shaping optics to produce a line‐shaped beam which can be scanned at high speed to anneal the Si film in a single scan, where the high scan speed minimizes thermal stress. The scan‐to‐scan is seamless to cover a large panel such as G6 or G8 without glass damage. The physical phenomena responsible for melting and recrystallization are explained by heat transfer simulations for process optimization.