8.2: Invited Paper: Research on the Effects of Different Doping Methods on Top‐Gate IGZO TFT. (28th November 2018)

• Record Type: Journal Article
• Authors: Deng, Yakov; Li, Ziran; Huang, Guihua; Zhang, Qianyi; Luo, Chuanbao; Yao, Jiangbo; Qin, Shijian
• Is Part Of: Digest of technical papers. Volume 49(2018)Supplement 1
• Page Start: 79
• Page End: 81
• Publication Date: 2018-11-28
• Subjects: Top-Gate IGZO TFT -- S/D -- Active layer -- Doping -- Oxygen Concentration -- Ion Bombardment -- H* Diffusion -- Al Seize oxygen -- Defect state; Information display systems -- Congresses; 621.3815422
• DOI: 10.1002/sdtp.12645
• Languages: English
• ISSNs: 0097-966X

Abstract

Abstract : By N2O/N2/O2 doped the active layer and He/Ar/Al/SiNx doped the S/D of Top‐Gate IGZO TFT, we have summarized the effects of different doping modes on the properties of Top‐Gate IGZO TFT, including doping the active layer of Top‐Gate IGZO TFT with N2O can obviously improve the electrical uniformity of devices, and doping the S/D of Top‐Gate IGZO TFT with aluminum(Al) can significantly improve the NBTIS/ PBTIS of devices, etc. By optimizing the doping method, we have fabricated a device with both good electrical uniformity and good electrical properties, with threshold voltage shift (ΔVth) of 18 points less than 1V, Mobility=8.6 cm2/V.S, Subthreshold Swing(SS) =0.26 V/dec, Threshold Voltage （Vth） =2.9V, ΔVth=1.54 V (NBTIS, Bias=‐30V, T=80 ℃, Backlight=4500Nit, 2000S, W/L=6/12), ΔVth= 5.28V(PBTIS, Bias=+30V ， T=80 ℃, Backlight=4500Nit, 2000S， W/L=6/12).