8.1: Invited Paper: Enhanced Elevated‐Metal Metal‐Oxide Thin‐Film Transistor Technology. (28th November 2018)

• Record Type: Journal Article
• Authors: Lu, Lei; Li, Jiapeng; Xia, Zhihe; Wang, Sisi; Kwok, Hoi Sing; Wong, Man
• Is Part Of: Digest of technical papers. Volume 49(2018)Supplement 1
• Page Start: 75
• Page End: 78
• Publication Date: 2018-11-28
• Subjects: Thin-Film Transistor -- Elevated-Metal Metal-Oxide -- Mask-Count -- Self-Aligned -- Indium-Gallium-Zinc Oxide -- Annealing-Induced Source and Drain -- Flexible Substrate; Information display systems -- Congresses; 621.3815422
• DOI: 10.1002/sdtp.12644
• Languages: English
• ISSNs: 0097-966X

Abstract

Abstract : Enhancement to the elevated‐metal metal‐oxide (EMMO) thin‐film transistor (TFT) architecture employing annealing‐induced source/drain regions is presently reported, thus further extending the advantage of EMMO over the conventional TFT architectures. The enhancement includes: a 3‐mask process resulting in a reduced mask‐count, hence manufacturing cost; a bottom‐gate self‐aligned process resulting in reduced parasitic overlap capacitance, hence signal delay; and a 3000‐°C process, with the lower temperature offering better compatibility with a wider range of flexible substrates.