49.2: Invited Paper: Research and Applications of Amorphous Metal‐Oxide Semiconductor Devices ‐ In‐Ga‐Zn‐O and Ga‐Sn‐O Thin‐Film Devices ‐. (28th November 2018)

• Record Type: Journal Article
• Authors: Kimura, Mutsumi; Kamiya, Toshio; Matsuda, Tokiyoshi; Umeda, Kenta; Fukawa, Asuka; Nakashima, Yasuhiko
• Is Part Of: Digest of technical papers. Volume 49(2018)Supplement 1
• Page Start: 512
• Page End: 515
• Publication Date: 2018-11-28
• Subjects: amorphous metal-oxide semiconductor (AOS) -- In-Ga-Zn-O (IGZO) -- Ga-Sn-O (GTO) -- thin-film device; Information display systems -- Congresses; 621.3815422
• DOI: 10.1002/sdtp.12768
• Languages: English
• ISSNs: 0097-966X

Abstract

Abstract : IGZO TFTs are analyzed, and GTO devices are introduced as rare metal free devices. GTO TFTs are made by simple sputtering, and the performance is excellent, such as, mobility=34.6 cm 2 /Vs, good stability, etc. We propose applications of IGZO and GTO devices to not only FPDs but also thermoelectric and neuromorphic devices.