Photoelectric conversion characteristics of c-Se-based thin-film photodiodes in imaging device. (May 2015)

• Record Type: Journal Article
• Authors: Imura, S; Kikuchi, K; Miyakawa, K; Ohtake, H; Kubota, M
• Is Part Of: Journal of physics. Number 619(2015)
• Publication Date: 2015-05
• Subjects: Physics -- Congresses; 530.5
• DOI: 10.1088/1742-6596/619/1/012008
• Languages: English
• ISSNs: 1742-6588

Abstract

Abstract: Herein, we report the use of high-efficiency crystalline-selenium-based (c-Se-based) thin-film heterojunction photodiodes in imaging devices. As a novel experiment, we use an image pickup tube with a photoelectric conversion layer consisting of n-gallium oxide (Ga2 O3 )/p-c-Se heterojunction photodiodes to obtain high-resolution images at a relatively low applied voltage. We reduce the thickness of the Ga2 O3 layer to expand the depletion layer into the c-Se layer at a lower applied voltage. In addition, Sn-doping of the Ga2 O3 layer effectively increases the carrier concentration, thereby allowing the photodiode to operate at lower voltage.