Coulomb-coupled quantum-dot thermal transistors. (25th May 2018)

• Record Type: Journal Article
• Authors: Zhang, Yanchao; Yang, Zhimin; Zhang, Xin; Lin, Bihong; Lin, Guoxing; Chen, Jincan
• Is Part Of: Europhysics letters. Volume 122:Number 1(2018:Apr.)
• Publication Date: 2018-05-25
• Subjects: 73.23.Hk -- 85.35.Be -- 44.10.+i; Physics -- Periodicals; Electronic journals; 530.05
• DOI: 10.1209/0295-5075/122/17002
• Languages: English
• ISSNs: 0295-5075

Abstract

Abstract: A quantum-dot thermal transistor consisting of three Coulomb-coupled quantum dots coupled to the respective electronic reservoirs by tunnel contacts is established. The heat flows through the collector and emitter can be controlled by the temperature of the base. It is found that a small change in the base heat flow can induce a large heat flow change in the collector and emitter. The huge amplification factor can be obtained by optimizing the Coulomb interaction between the collector and the emitter or by decreasing the tunneling rate at the base. The proposed quantum-dot thermal transistor may open up potential applications in low-temperature solid-state thermal circuits at the nanoscale.