Thermal transport in monolayer InSe. (24th July 2017)

• Record Type: Journal Article
• Authors: Nissimagoudar, Arun S; Ma, Jinlong; Chen, Yani; Li, Wu
• Is Part Of: Journal of physics. Volume 29:Number 33(2017)
• Publication Date: 2017-07-24
• Subjects: two-dimensional InSe -- thermal transport -- first-principle -- phonons -- Boltzmann transport equation; Condensed matter -- Periodicals; Matière condensée -- Périodiques; Vaste stoffen; Vloeistoffen; Natuurkunde; Electronic journals; Computer network resources; 530.4105
• DOI: 10.1088/1361-648X/aa7b63
• Languages: English
• ISSNs: 0953-8984

Abstract

Abstract: Two-dimensional InSe, a recently synthesized semiconductor having a moderate band gap, has gained attention due to its ultra high mobility and high photo-responsivity. In this work, we calculate the lattice thermal conductivity ( κ ) of monolayer InSe by solving the phonon Boltzmann transport equation (BTE) with first-principles calculated inter atomic force constants. κ of monolayer InSe is isotropic and found to be around 27.6 W m K − 1 at room temperature along the in-plane direction. The size dependence of κ shows the size effect can persist up to 20 μ m. Further, κ can be reduced to half by tuning the sample size to 300 nm. This low value suggests that κ might be a limiting factor for emerging nanoelectronic applications of monolayer InSe.