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HARVARD Citation
Lin, Y. et al. (n.d.). A versatile low-resistance ohmic contact process with ohmic recess and low-temperature annealing for GaN HEMTs. Semiconductor science and technology. p. . [Online].
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Lin, Y. et al. (n.d.). A versatile low-resistance ohmic contact process with ohmic recess and low-temperature annealing for GaN HEMTs. Semiconductor science and technology. p. . [Online].