Micro-light-emitting diodes with III–nitride tunnel junction contacts grown by metalorganic chemical vapor deposition. (13th December 2017)

• Record Type: Journal Article
• Authors: Hwang, David; Mughal, Asad J.; Wong, Matthew S.; Alhassan, Abdullah I.; Nakamura, Shuji; DenBaars, Steven P.
• Is Part Of: Applied physics express. Volume 11:Number 1(2018)
• Publication Date: 2017-12-13
• Subjects: Physics -- Periodicals; Technology -- Periodicals; 621.05
• DOI: 10.7567/APEX.11.012102
• Languages: English
• ISSNs: 1882-0778

Abstract

Abstract: Micro-light-emitting diodes (µLEDs) with tunnel junction (TJ) contacts were grown entirely by metalorganic chemical vapor deposition. A LED structure was grown, treated with UV ozone and hydrofluoric acid, and reloaded into the reactor for TJ regrowth. The silicon doping level of the n ++ -GaN TJ was varied to examine its effect on voltage. µLEDs from 2.5 × 10 −5 to 0.01 mm 2 in area were processed, and the voltage penalty of the TJ for the smallest µLED at 20 A/cm 2 was 0.60 V relative to that for a standard LED with indium tin oxide. The peak external quantum efficiency of the TJ LED was 34%.