Oxygen precipitate positive charge evolution upon annealing of oxygen implanted silicon. (May 2019)
- Record Type:
- Journal Article
- Title:
- Oxygen precipitate positive charge evolution upon annealing of oxygen implanted silicon. (May 2019)
- Main Title:
- Oxygen precipitate positive charge evolution upon annealing of oxygen implanted silicon
- Authors:
- Danilov, D
Vyvenko, O
Trushin, M
Loshachenko, A
Sobolev, N - Abstract:
- Abstract: Oxygen precipitates (OPs) formed by the annealing of oxygen implanted silicon samples at diverse temperatures in the ranges from 700°C to 1100°С have been investigated with capacitance-voltage and transmission electron microscopy techniques. An increase of the OP sizes with the increasing temperature was found to accompany with a decrease of the OP embedded positive charge being inversely proportional to the formers. The obtained result showed that the positive charge is localized in SiOx shell of predominantly stoichiometric OP core.
- Is Part Of:
- Journal of physics. Volume 1190(2019)
- Journal:
- Journal of physics
- Issue:
- Volume 1190(2019)
- Issue Display:
- Volume 1190, Issue 1 (2019)
- Year:
- 2019
- Volume:
- 1190
- Issue:
- 1
- Issue Sort Value:
- 2019-1190-0001-0000
- Page Start:
- Page End:
- Publication Date:
- 2019-05
- Subjects:
- Physics -- Congresses
530.5 - Journal URLs:
- http://www.iop.org/EJ/journal/1742-6596 ↗
http://ioppublishing.org/ ↗ - DOI:
- 10.1088/1742-6596/1190/1/012016 ↗
- Languages:
- English
- ISSNs:
- 1742-6588
- Deposit Type:
- Legaldeposit
- View Content:
- Available online (eLD content is only available in our Reading Rooms) ↗
- Physical Locations:
- British Library DSC - 5036.223000
British Library DSC - BLDSS-3PM
British Library HMNTS - ELD Digital store - Ingest File:
- 11212.xml